Details

Autor(en) / Beteiligte

• Klimov, V. I.
• Schwarz, Ch. J.
• McBranch, D. W.
• White, C. W.

Titel

Initial carrier relaxation dynamics in ion-implanted Si nanocrystals: Femtosecond transient absorption study

Ist Teil von

• Applied physics letters, 1998-11, Vol.73 (18), p.2603-2605

Erscheinungsjahr

1998

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Transient absorption spectra of ion-implanted Si nanocrystals (NCs) exhibit two picosecond photoinduced absorption features, attributed to carriers in NC quantized states (high-energy band) and Si/SiO2 interface states (low-energy band). Fast relaxation of the high-energy band indicates that populations of quantized states are short lived and decay on the sub-10-ps time scale due to efficient surface trapping. This shows that the red emission in our samples is not due to carriers in quantized states but rather is a result of deactivation of surface traps.