Details

Autor(en) / Beteiligte

• Kasai, Jun-ichi
• Kawata, Masahiko

Titel

Microphotoluminescence of oval defects in a GaAs layer grown by molecular beam epitaxy

Ist Teil von

• Applied physics letters, 1998-10, Vol.73 (14), p.2012-2014

Erscheinungsjahr

1998

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Using a low-temperature microphotoluminescence method, we have investigated the optical properties of oval defects in a GaAs layer grown by molecular beam epitaxy. The photoluminescence (PL) spectra of oval defects exhibited new distinct peaks, which had a narrow width (0.5 meV) and a strong intensity comparable to the exciton luminescence from a defect-free region of the epilayer. The excitation-power dependence and our PL image measurements suggest that the peaks are due to the recombination of excitons bound to the defects. The PL image of the free-exciton luminescence clearly revealed the features of a pair of asymmetric oval defects, each of which had a pyramidal structure consisting of stacking fault planes. The clear features indicate effective carrier confinement within the pyramid, where the stacking fault planes functioned as a potential barrier.