Details

Autor(en) / Beteiligte

• Carter-Coman, Carrie
• Bicknell-Tassius, Robert
• Brown, April S.
• Jokerst, Nan Marie

Titel

Analysis of In0.07Ga0.93As layers on GaAs compliant substrates by double crystal x-ray diffraction

Ist Teil von

• Applied physics letters, 1997-03, Vol.70 (13), p.1754-1756

Erscheinungsjahr

1997

Quelle

AIP Journals Complete

Beschreibungen/Notizen

• Double crystal x-ray diffraction data is presented from the most extensive compliant substrate experiment to date. Five consecutive InGaAs–GaAs growths were performed simultaneously on GaAs-based thin film compliant substrates and thick reference substrates. The In0.07Ga0.93As layers were grown to thicknesses below and above the conventional critical thickness. It was found that InGaAs films grown on the compliant substrates have a larger critical thickness and slower strain relief than InGaAs grown on conventional GaAs substrates.