Details

Autor(en) / Beteiligte

• Burm, Jinwook
• Chu, Kenneth
• Davis, William A.
• Schaff, William J.
• Eastman, Lester F.
• Eustis, Tyler J.

Titel

Ultra-low resistive ohmic contacts on n-GaN using Si implantation

Ist Teil von

• Applied physics letters, 1997-01, Vol.70 (4), p.464-466

Erscheinungsjahr

1997

Quelle

AIP Journals Complete

Beschreibungen/Notizen

• Implanted ohmic contacts were made on molecular beam epitaxy grown GaN materials. Si was implanted at a doping density of about 4×1020  cm-3 to decrease the contact resistance of the contact, followed by an activation anneal at 1150 °C for 30 s. The overlay metal Ti/Au was evaporated. Four-probe measurements were performed on transmission line model patterns. The measured maximum contact resistance was 0.097 Ω mm and the apparent specific contact resistance was 3.6×10−8 Ω cm2.