Details

Autor(en) / Beteiligte

• Woicik, J. C.
• Miyano, K. E.
• Pellegrino, J. G.
• Shaw, P. S.
• Southworth, S. H.
• Karlin, B. A.

Titel

Strain and relaxation in InAs and InGaAs films grown on GaAs(001)

Ist Teil von

• Applied physics letters, 1996-05, Vol.68 (21), p.3010-3012

Erscheinungsjahr

1996

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• The strain and relaxation of InAs and InGaAs films grown on GaAs(001) have been examined by the x-ray standing wave and extended x-ray absorption fine-structure techniques. While 1 monolayer (ML) films of both InAs and InGaAs are found to be tetragonally distorted in accordance with the prediction of macroscopic-elastic theory, thicker InAs films are found to collapse to their natural-lattice constant past a critical thickness Tc, of ∼2 ML’s. By 8 ML’s, bond-length strain is no longer evident, and a large degree of structural disorder is observed.