Details

Autor(en) / Beteiligte

• Raynaud, C.
• Autran, J. L.
• Briot, J. B.
• Balland, B.
• Bécourt, N.
• Billon, T.
• Jaussaud, C.

Titel

Comparison of trapping–detrapping properties of mobile charge in alkali contaminated metal-oxide-silicon carbide structures

Ist Teil von

• Applied physics letters, 1995-05, Vol.66 (18), p.2340-2342

Erscheinungsjahr

1995

Quelle

美国小型学会期刊集（AIP Scitation平台）

Beschreibungen/Notizen

• We have performed thermally stimulated ionic current measurements on aluminum-oxide-silicon carbide (3C and 6H polytypes) capacitors to study the trapping–detrapping properties of alkali mobile ions at the oxide interfaces. Two traps, at ∼1.0 and ∼1.4 eV, have been detected at the oxide/SiC interface; only one (at ∼1.0 eV) is present at the aluminum/oxide interface. Studies of the energy dependence of the oxide traps with the electric field are reported here for comparison with silicon structures. A numerical method has been used to calculate the energy distributions of these traps, which reveal some differences between the two kinds of structures.