Details

Autor(en) / Beteiligte

• Lan, Sheng
• Yang, Cheng-Qing
• Cui, De-Long
• Xu, Wan-Jing
• Liu, Hong-Du

Titel

Deep levels in undoped In0.5Ga0.5P and In0.5Ga0.5P0.99As0.01 grown on GaAs (100) substrates

Ist Teil von

• Applied physics letters, 1995-02, Vol.66 (7), p.872-874

Erscheinungsjahr

1995

Link zum Volltext

Quelle

American Institute of Physics

Beschreibungen/Notizen

• High-quality In0.5Ga0.5P and In0.5Ga0.5P0.99As0.01 epitaxial layers on the GaAs (100) substrate have been grown by liquid phase epitaxy (LPE). Special attention is paid to the deep level transient spectroscopy (DLTS) and transient photoresponse in these samples. It is found that the epitaxial layers grown under the optimum P vapor pressure are free from deep levels and show a much longer photocarrier lifetime. We suggest that the deep level may be attributed to interstitial P atoms. From the photocarrier lifetime of different samples, we can conclude that the interstitial P atoms act as recombination centers.