Details

Autor(en) / Beteiligte

• RAINERI, V
• SCHREUTELKAMP, R. J
• SARIS, F. W
• JANSSEN, K. T. F
• KAIM, R. E

Titel

Reduction of boron diffusion in silicon by 1 MeV 29Si+ irradiation

Ist Teil von

• Applied physics letters, 1991-03, Vol.58 (9), p.922-924

Ort / Verlag

Melville, NY: American Institute of Physics

Erscheinungsjahr

1991

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Reduction of the transient diffusion of B, implanted in Si along [100] at 10 keV to a dose of 1×1013/cm2, after annealing at 900 °C for 10 s has been observed in samples irradiated with 1.0 MeV 29Si ions to a dose of 5×1013/cm2 or higher. A lower Si dose did not influence the transient B tail diffusion. Secondary defects formed near the peak of the 1 MeV Si damage distribution, for doses of 5×1013/cm2 and higher, act as efficient sinks for interstitials from shallower depths and thereby reduce the transient tail diffusion.