Details

Autor(en) / Beteiligte

• Sen, Mike Tang Soo Kiong Ah
• Janssen, Gaby
• Mewe, Agnes
• Bronsveld, Paula
• Melskens, Jimmy
• Hashemi, Fatemeh
• Procel-Moya, Paul
• Weeber, Arthur

Titel

Influence of passivating interlayers on the carrier selectivity of MoO x contacts for c-Si solar cells

Ist Teil von

• EPJ Photovoltaics, 2024, Vol.15, p.34

Erscheinungsjahr

2024

Quelle

EZB Electronic Journals Library

Beschreibungen/Notizen

• The application of molybdenum oxide (MoO x ) as a hole-selective contact for silicon-based solar cells has been explored due to superior optical transmittance and potentially leaner manufacturing compared to fully amorphous silicon-based heterojunction (SHJ) devices. However, the development of MoO x contacts has been hampered by their poor thermal stability, resulting in a carrier selectivity loss and an S-shaped IV curve. The aim of this study is to understand the influence of different passivating interlayers on the carrier selectivity of hole-selective MoO x contacts for crystalline silicon (c-Si) solar cells. We highlight the effect of different interlayers on the surface passivation quality, contact selectivity, and the thermal stability of our MoO x -contacted devices. The interlayers studied are intrinsic hydrogenated amorphous silicon (a-Si:H( i )), thermally grown ultrathin SiO 2 , and a stack consisting of an ultrathin SiO y and Al 2 O 3 layer. Additionally, we simulate the interacting interlayer properties on the carrier selectivity of our MoO x contacts using a simplified model. Among these interlayers, the Al 2 O 3 /SiO y stack shows to be a promising alternative to SiO 2 by enabling efficient transport of holes while being able to sustain an annealing temperature of at least 250 °C underlining its potential in module manufacturing and outdoor operation.