Electronics letters, 2014-09, Vol.50 (20), p.1465-1467
2014
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Details
- Autor(en) / Beteiligte
- Titel
- InGaZnO metal-base transistor with high current gain
- Ist Teil von
- Electronics letters, 2014-09, Vol.50 (20), p.1465-1467
- Ort / Verlag
- The Institution of Engineering and Technology
- Erscheinungsjahr
- 2014
- Quelle
- EZB Free E-Journals
- Beschreibungen/Notizen
- The fabrication of metal-base transistors (MBTs) based on InGaZnO at room temperature is reported for the first time. With a suitable oxygen doping to the sputtering-deposited InGaZnO film and an HfSiO interlayer, improved diode performances with enhanced Schottky barrier heights of 0.70 and 0.66 eV are obtained for the base/collector (Ti/InGaZnO) and base/emitter (Au/HfSiO/InGaZnO) junctions, respectively. InGaZnO MBT using a Ti(10 nm)/Au(10 m)/HfSiO(5 nm) dual metal base shows a high common-emitter current gain (β) 840–310 at VCE = 2 V and IB ranging from 1 to 10 nA.
- Sprache
- Englisch
- Identifikatoren
- ISSN: 0013-5194, 1350-911XeISSN: 1350-911XDOI: 10.1049/el.2014.2201Titel-ID: cdi_crossref_primary_10_1049_el_2014_2201
- Format
- –
- Schlagworte
- Au‐HfSiO‐InGaZnO, base/collector junctions, base/emitter junctions, current 1 nA to 10 nA, diode performances, gallium compounds, gold, hafnium compounds, high common‐emitter current gain, indium compounds, interlayer, metal‐base transistor, Organic and inorganic circuits and devices, oxygen doping, Schottky barrier heights, Schottky barriers, semiconductor diodes, semiconductor doping, semiconductor materials, size 5 nm to 10 nm, sputtered coatings, sputtering‐deposited film, temperature 293 K to 298 K, thin film transistors, titanium, Ti‐Au‐HfSiO, Ti‐InGaZnO, voltage 2 V, zinc compounds