Details

Autor(en) / Beteiligte

• Deng, Lier
• Yuan, Weihang
• He, Dawei
• Liu, Shuangyan
• Du, Yuxuan
• Gong, Lei
• Liu, Huan

Titel

Transient absorption measurements of interlayer charge transfer in a WS 2 /GeS van der Waals heterostructure

Ist Teil von

• Physical chemistry chemical physics : PCCP, 2021-08, Vol.23 (32), p.17259-17264

Erscheinungsjahr

2021

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• We introduce germanium sulfide (GeS) as a new layered material for the fabrication of two-dimensional van der Waals materials and heterostructures. Heterostructures of WS 2 /GeS were fabricated using mechanical exfoliation and dry transfer techniques. Significant photoluminescence quenching of WS 2 in the heterostructures indicates efficient charge transfer. Transient absorption measurements were performed to study the dynamics of charge transfer. The results show that the heterostructure forms a type-II band alignment with the conduction band minimum and valence band maximum located in the WS 2 and GeS layers, respectively. The ultrafast hole transfer from WS 2 to GeS is confirmed by the faster decay of the lower peak value of the differential reflection signal in the heterostructure sample, in comparison to the WS 2 monolayer. These results introduce GeS as a promising semiconductor material for developing new novel heterostructures.