Sie befinden Sich nicht im Netzwerk der Universität Paderborn. Der Zugriff auf elektronische Ressourcen ist gegebenenfalls nur via VPN oder Shibboleth (DFN-AAI) möglich. mehr Informationen...
Transient absorption measurements of interlayer charge transfer in a WS 2 /GeS van der Waals heterostructure
Ist Teil von
Physical chemistry chemical physics : PCCP, 2021-08, Vol.23 (32), p.17259-17264
Erscheinungsjahr
2021
Quelle
Alma/SFX Local Collection
Beschreibungen/Notizen
We introduce germanium sulfide (GeS) as a new layered material for the fabrication of two-dimensional van der Waals materials and heterostructures. Heterostructures of WS 2 /GeS were fabricated using mechanical exfoliation and dry transfer techniques. Significant photoluminescence quenching of WS 2 in the heterostructures indicates efficient charge transfer. Transient absorption measurements were performed to study the dynamics of charge transfer. The results show that the heterostructure forms a type-II band alignment with the conduction band minimum and valence band maximum located in the WS 2 and GeS layers, respectively. The ultrafast hole transfer from WS 2 to GeS is confirmed by the faster decay of the lower peak value of the differential reflection signal in the heterostructure sample, in comparison to the WS 2 monolayer. These results introduce GeS as a promising semiconductor material for developing new novel heterostructures.
Sprache
Englisch
Identifikatoren
ISSN: 1463-9076
eISSN: 1463-9084
DOI: 10.1039/D1CP01892B
Titel-ID: cdi_crossref_primary_10_1039_D1CP01892B
Format
–
Weiterführende Literatur
Empfehlungen zum selben Thema automatisch vorgeschlagen von bX