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Transfer of transition-metal dichalcogenide circuits onto arbitrary substrates for flexible device applications
Ist Teil von
Nanoscale, 2019-11, Vol.11 (45), p.22118-22124
Ort / Verlag
Cambridge: Royal Society of Chemistry
Erscheinungsjahr
2019
Link zum Volltext
Quelle
Alma/SFX Local Collection
Beschreibungen/Notizen
Transition-metal dichalcogenide (TMD) materials with two-dimensional layered structures and stable surfaces are well suited for transparent and flexible device applications. In order to completely utilize the advantages of thickness control and fabrication of various heterostructure stacks, we proposed a transfer method of TMD field-effect transistors (FETs) and TMD complementary metal-oxide-semiconductor (CMOS) circuits from a Si/SiO
2
substrate to a flexible substrate. We compared the characteristics of transferred MoS
2
and WSe
2
FETs with those of the corresponding devices transferred after channel passivation with an Al
2
O
3
layer on a flexible substrate. Al
2
O
3
passivation further stabilized the transfer of the entire device with electrodes. A CMOS circuit with MoS
2
and WSe
2
materials could be successfully transferred to a polyethylene terephthalate substrate after the channel passivation. This implies that TMD circuits can be easily fabricated on polymer substrates, which makes them suitable for use in semiconductor processes, for various applications.
Transition-metal dichalcogenide (TMD) materials with two-dimensional layered structures and stable surfaces are well suited for transparent and flexible device applications.