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Polymer Memristive Layer with Reduced Graphene Oxide and Al Electrodes for Tunable Memory Windows with Low-Power Operation and Enhanced Electrical Readout
Tuning memory windows is vital for cross-bar memory architectures with low power and free cross-talk. Herein, we demonstrate a synergistic interface/electrode nanoengineering strategy to tune memory windows for low power operation and enhanced electrical readout in polymer devices; this approach is workable for most insulating or semiconducting polymeric mediums. Through customizing the resistivity of selectively reduced graphene oxide nanoelectrodes, an inherent sub μA current is recorded in the programming storage state. The nanocavity of the polymer interface can reduce the switching voltage due to local electric field enhancement, thus leading to tunable memory windows. By stacking a selector onto the memory, the vertical architecture features dynamic memory kinetics, enabling cross-talk-free readout by suppressing sneak leakage current paths.