Details

Autor(en) / Beteiligte

• Ros, Carles
• Andreu, Teresa
• Hernández-Alonso, María Dolores
• Penelas-Pérez, Germán
• Arbiol, Jordi
• Morante, Joan R

Titel

Charge Transfer Characterization of ALD-Grown TiO 2 Protective Layers in Silicon Photocathodes

Ist Teil von

• ACS applied materials & interfaces, 2017-05, Vol.9 (21), p.17932-17941

Ort / Verlag

United States

Erscheinungsjahr

2017

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• A critical parameter for the implementation of standard high-efficiency photovoltaic absorber materials for photoelectrochemical water splitting is its proper protection from chemical corrosion while remaining transparent and highly conductive. Atomic layer deposited (ALD) TiO layers fulfill material requirements while conformally protecting the underlying photoabsorber. Nanoscale conductivity of ALD TiO protective layers on silicon-based photocathodes has been analyzed, proving that the conduction path is through the columnar crystalline structure of TiO . Deposition temperature has been explored from 100 to 300 °C, and a temperature threshold is found to be mandatory for an efficient charge transfer, as a consequence of layer crystallization between 100 and 200 °C. Completely crystallized TiO is demonstrated to be mandatory for long-term stability, as seen in the 300 h continuous operation test.