Details

Autor(en) / Beteiligte

• Kivambe, Maulid M
• Haschke, Jan
• Horzel, Jörg
• Aïssa, Brahim
• Abdallah, Amir A
• Belaidi, Abdelhak
• Monnard, Raphaël
• Barraud, Loris
• Descoeudres, Antoine
• Debrot, Fabien
• Despeisse, Matthieu
• Boccard, Mathieu
• Ballif, Christophe
• Tabet, Nouar

Titel

Record-Efficiency n‑Type and High-Efficiency p‑Type Monolike Silicon Heterojunction Solar Cells with a High-Temperature Gettering Process

Ist Teil von

• ACS applied energy materials, 2019-07, Vol.2 (7), p.4900-4906

Ort / Verlag

American Chemical Society

Erscheinungsjahr

2019

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• We report independently confirmed 22.15% and record 22.58% power conversion efficiencies for thin (130–140 μm) p-type and n-type monolike Si solar cells, respectively. We comparatively assessed advanced n-type and p-type monolike silicon wafers for potential use in low-cost, high-efficiency solar cell applications by using phosphorus diffusion gettering for material-quality improvement and silicon heterojunction solar cell fabrication for assessment of performance in high-efficiency photovoltaic device architecture. We show that gettering improves material quality and device properties significantly, depending on the type of doping (n-type or p-type), wafer position in the ingot, drive-in temperature, and cooling profile. Owing to the high open circuit voltage (725 mV), the record n-type solar cell also represents the highest reported solar cell efficiency for cast silicon to date.