Details

Autor(en) / Beteiligte

• Nguyen, Nhat-Khuong
• Nguyen, Thanh
• Nguyen, Tuan-Khoa
• Yadav, Sharda
• Dinh, Toan
• Masud, Mostafa Kamal
• Singha, Pradip
• Do, Thanh Nho
• Barton, Matthew J
• Ta, Hang Thu
• Kashaninejad, Navid
• Ooi, Chin Hong
• Nguyen, Nam-Trung
• Phan, Hoang-Phuong

Titel

Wide-Band-Gap Semiconductors for Biointegrated Electronics: Recent Advances and Future Directions

Ist Teil von

• ACS applied electronic materials, 2021-05, Vol.3 (5), p.1959-1981

Ort / Verlag

American Chemical Society

Erscheinungsjahr

2021

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Wearable and implantable bioelectronics have experienced remarkable progress over the last decades. Bioelectronic devices provide seamless integration between electronics and biological tissue, offering unique functions for healthcare applications such as real-time and online monitoring and stimulation. Organic semiconductors and silicon-based flexible electronics have been dominantly used as materials for wearable and implantable devices. However, inherent drawbacks such as low electronic mobility, particularly in organic materials, instability, and narrow band gaps mainly limit their full potential for optogenetics and implantable applications. In this context, wide-band-gap (WBG) materials with excellent electrical and mechanical properties have emerged as promising candidates for flexible electronics. With a significant piezoelectric effect, direct band gap and optical transparency, and chemical inertness, these materials are expected to have practical applications in many sectors such as energy harvesting, optoelectronics, or electronic devices, where lasting and stable operation is highly desired. Recent advances in micro/nanomachining processes and synthesis methods for WBG materials led to their possible use in soft electronics. Considering the importance of WBG materials in this fast-growing field, the present paper provides a comprehensive Review on the most common WBG materials, including zinc oxide (ZnO) for II–VI compounds, gallium nitride (GaN) for III–V compounds, and silicon carbide (SiC) for IV–IV compounds. We first discuss the fundamental physical and chemical characteristics of these materials and their advantages for biosensing applications. We then summarize the fabrication techniques of wide-band-gap semiconductors, including how these materials can be transferred from rigid to stretchable and flexible substrates. Next, we provide a snapshot of the recent development of flexible WBG materials-based wearable and implantable devices. Finally, we conclude with perspectives on future research direction.