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Effect of pulsed off-times on the reactive HiPIMS preparation of zirconia thin films
Ist Teil von
Vacuum, 2015-08, Vol.118, p.38-42
Ort / Verlag
Elsevier Ltd
Erscheinungsjahr
2015
Link zum Volltext
Quelle
Alma/SFX Local Collection
Beschreibungen/Notizen
The pulsed off-time is a crucial parameter in reactive high power impulse magnetron sputtering (HiPIMS). In this work, zirconia thin films were deposited using reactive HiPIMS. The mean ionization distance of zirconium atoms was calculated as a function of electron energy and plasma density. The peak current and power density of the target increased with increasing off-times during the sputtering process. Furthermore, the microstructural, optical, and electrical properties of thin films fabricated using various off-times were investigated. Atomic force microscopy revealed a minimal RMS roughness of less than 1.7 nm was obtained. The transmittances of all films exceeded 89.3%. The energy band gap shifted to high energy as the pulsed off-time was increased. The film prepared with a pulsed off-time of 2500 μs yielded the highest energy band gap (5.93 eV) and the lowest leakage current density (0.7 × 10−7 A/cm2).
•Zirconia films are deposited by reactive high power impulse magnetron sputtering.•Peak target currents are affected by pulsed off-times.•Low roughness films are obtained.•Films show a high transmittance (>89.3%).•Low leakage currents are obtained.