Details

Autor(en) / Beteiligte

• Balaji, G.
• Prabavathy, N.
• Balasundaraprabhu, R.
• Prasanna, S.
• Echeverria, Elena
• McIlroy, D.N.
• Sivakumaran, K.
• Kannan, M.D.
• Velauthapillai, Dhayalan

Titel

Investigations on post sulphurised Cu2ZnSnS4 absorber layer thin films prepared using radio frequency magnetron sputtering

Ist Teil von

• Thin solid films, 2020-02, Vol.695, p.137764, Article 137764

Ort / Verlag

Elsevier B.V

Erscheinungsjahr

2020

Quelle

Elsevier ScienceDirect Journals

Beschreibungen/Notizen

• •CuS, ZnS, SnS sputtering targets were used to deposit Cu2ZnSnS4 thin films.•CZTS was sulphurised at 350 ⁰C for 60 min in H2S atmosphere.•X-ray photoelectron spectroscopy revealed stoichiometric CZTS thin films.•Ultra-violet photoelectron spectroscopy showed ideal work function for CZTS films. Copper zinc tin sulfide (CZTS) quaternary semiconductor thin films were prepared using binary sulfur rich sputtering targets - copper sulfide (CuS), zinc sulfide (ZnS), and tin sulfide (SnS) by Radio Frequency Magnetron Sputtering with the stacking sequence CuS/ ZnS/ SnS at a substrate temperature of 300 °C. The films were then subsequently sulphurised at 350 °C in Hydrogen Sulfide atmosphere for 60 min. X-ray diffraction studies carried out on the CZTS films revealed the presence of CZTS kesterite phase along the 〈112〉 and 〈220〉 directions. X- ray diffraction results were validated by Raman spectroscopy. The composition of CZTS thin films were confirmed using X-Ray photoelectron spectroscopy and the atomic percentage of the individual elements were quantitatively estimated. The Valance band spectra and Ultra-violet photoelectron spectroscopy were used to study the electronic properties of the sulphurised CZTS thin films. The optical properties of CZTS thin films were studied using Ultraviolet - visible spectrophotometer and the optical band gap was found to be 1.477 eV. The Hall Effect measurements confirmed the p-type nature of the films and the results are discussed.