Details

Autor(en) / Beteiligte

• Wang, Jinzhong
• Sallet, Vincent
• Jomard, François
• Botelho do Rego, Ana M.
• Elamurugu, Elangovan
• Martins, Rodrigo
• Fortunato, Elvira

Titel

Influence of substrate temperature on N-doped ZnO films deposited by RF magnetron sputtering

Ist Teil von

• Thin solid films, 2007-10, Vol.515 (24), p.8785-8788

Ort / Verlag

Lausanne: Elsevier B.V

Erscheinungsjahr

2007

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Nitrogen-doped ZnO films were deposited by RF magnetron sputtering in 75% of N 2 / (Ar + N 2) gas atmosphere. The influence of substrate temperature ranging from room temperature (RT) to 300 °C was analyzed by X-ray diffractometry (XRD), spectrophotometry, X-ray photoelectron spectroscopy (XPS), secondary-ion mass spectrometry (SIMS) and Hall measurements setup. The XRD studies confirmed the hexagonal ZnO structure and showed that the crystallinity of these films increased with increasing substrate temperature ( T s). The optical studies indicate the average visible transmittance in the wavelength ranging 500–800 nm increases with increasing T s. A minimum transmittance (9.84%) obtained for the films deposited at RT increased with increasing T s to a maximum of 88.59% at 300 °C (500–800 nm). Furthermore, it was understood that the band gap widens with increasing T s from 1.99 eV (RT) to 3.30 eV (250 °C). Compositional analyses (XPS and SIMS) confirmed the nitrogen (N) incorporation into the ZnO films and its decreasing concentration with increasing T s. The negative sign of Hall coefficients confirmed the n-type conducting.