Details

Autor(en) / Beteiligte

• Huang, Jian
• Wang, Linjun
• Tang, Ke
• Lin, Meiai
• Yu, Yingzhou
• Lu, Xionggang
• Xia, Yiben

Titel

Fabrication and characterization of transparent n-ZnS/p-diamond film heterojunction

Ist Teil von

• Surface & coatings technology, 2013-08, Vol.228, p.S397-S400

Ort / Verlag

Amsterdam: Elsevier B.V

Erscheinungsjahr

2013

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Boron-doped p-type diamond films were prepared by microwave-plasma chemical vapor deposition (MPCVD) method. Transparent ZnS/diamond film heterojunction diodes were fabricated by depositing n-type ZnS films on the p-type diamond substrates using radio-frequency (RF) magnetron sputtering method for the first time. Current–voltage (I–V) characteristics of the devices were examined, and the results showed the distinct rectifying characteristics with a turn-on voltage of about 1.1V. The diode possessed an optical transmission of 50–70% from 500nm to 800nm wavelength region. ► We prepare transparent n-ZnS/p-diamond heterojunction diodes. ► The diode shows rectifying behavior with turn-on voltage of ~1.1V. ► The current transport mechanism depends on applied bias voltages. ► The diode has a broad transparent band from 500nm to 800nm region.