Details

Autor(en) / Beteiligte

• Jeong, C.W.
• Kang, D.H.
• Ha, D.W.
• Song, Y.J.
• Oh, J.H.
• Kong, J.H.
• Yoo, J.H.
• Park, J.H.
• Ryoo, K.C.
• Lim, D.W.
• Park, S.S.
• Kim, J.I.
• Oh, Y.T.
• Kim, J.S.
• Shin, J.M.
• Park, Jaehyun
• Fai, Y.
• Koh, G.H.
• Jeong, G.T.
• Jeong, H.S.
• Kim, Kinam

Titel

Writing current reduction and total set resistance analysis in PRAM

Ist Teil von

• Solid-state electronics, 2008-04, Vol.52 (4), p.591-595

Ort / Verlag

Oxford: Elsevier Ltd

Erscheinungsjahr

2008

Link zum Volltext

Quelle

Access via ScienceDirect (Elsevier)

Beschreibungen/Notizen

• We evaluated the limit of scaling bottom electrode contact (BEC) heater size and high resistivity heater to reduce writing current. It was found that the resistivity of heater should be increased for reducing writing current below the heater size of about 50 nm without any undesirable increase of resistance of the crystalline state (SET state, Rset). It was shown in the numerical simulations that the dissipated heat loss through BEC during melting GST was decreased in the increase of resistivity of heater. In addition, we analyzed the resistance components contributing to the total set resistance. It was observed that the undesired sharp increase of Rset as the BEC size decreases below 50 nm was attributed to the resistance component of GST–BEC interface. In the case of high resistivity heater, the contributions of both incomplete crystallization and heater itself were enhanced.