Details

Autor(en) / Beteiligte

• Liu, K.W.
• Ma, J.G.
• Zhang, J.Y.
• Lu, Y.M.
• Jiang, D.Y.
• Li, B.H.
• Zhao, D.X.
• Zhang, Z.Z.
• Yao, B.
• Shen, D.Z.

Titel

Ultraviolet photoconductive detector with high visible rejection and fast photoresponse based on ZnO thin film

Ist Teil von

• Solid-state electronics, 2007-05, Vol.51 (5), p.757-761

Ort / Verlag

Oxford: Elsevier Ltd

Erscheinungsjahr

2007

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• In this study, metal–semiconductor–metal (MSM) photoconductive detector was fabricated on c-axis preferred oriented ZnO film prepared on quartz by radio frequency magnetron sputtering. With the applied bias below 3 V, the dark current was below 250 nA. The typical responsivity peaked at around 360 nm, and had values of 30 A/W. In addition, the UV (360 nm) to visible (450 nm) rejection ratio of around five orders could be extracted from the spectra response. Furthermore, the transient response measurement revealed fast photoresponse with a rise time of 20 ns.