Details

Autor(en) / Beteiligte

• Himcinschi, C.
• Radu, I.
• Muster, F.
• Singh, R.
• Reiche, M.
• Petzold, M.
• Gösele, U.
• Christiansen, S.H.

Titel

Uniaxially strained silicon by wafer bonding and layer transfer

Ist Teil von

• Solid-state electronics, 2007-02, Vol.51 (2), p.226-230

Ort / Verlag

Oxford: Elsevier Ltd

Erscheinungsjahr

2007

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Uniaxial strain on wafer-level was realised by mechanically bending and direct wafer bonding of Si wafers in the bent state followed by thinning one of the Si wafers by the smart-cut process. This approach is flexible and allows to obtain different strain values at wafer-level in both tension and compression. UV micro-Raman spectroscopy was used to determine the strain in the thin transferred Si layers. Numerical modelling by 3D finite elements of the strain provided a good description of the experimental results.