Details

Autor(en) / Beteiligte

• Fang, X.G.
• Lin, S.X.
• Zhang, A.H.
• Lu, X.B.
• Gao, X.S.
• Zeng, M.
• Liu, J.-M.

Titel

Effect of bottom electrodes on polarization switching and energy storage properties in Pb0.97La0.02(Zr0.95Ti0.05)O3 antiferroelectric thin films

Ist Teil von

• Solid state communications, , Vol.219, p.39-42

Ort / Verlag

Elsevier Ltd

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Polarization switching and energy storage properties of a series of Pb0.97La0.02Zr0.95Ti0.05O3 (PLZT) thin films deposited on (100)-textured LaNiO3 (LNO)-buffered Si substrates and (111)-textured Pt/Ti/SiO2/Si substrates were investigated. It was revealed that the PLZT films deposited on the (100)-textured LNO-buffered Si substrates prefer the (100) textured structure, while the orientation of the films deposited on the (111)-textured Pt-coated Si substrates is random. With respect to the films on the Pt-coated Si substrates, the (100) textured PLZT films have bigger compressive residual stress, larger electrical polarization, better dielectric properties, and better energy storage performances. For the (100)-orientated PLZT films, the energy density (Ws) and efficiency (η) measured at room temperature are about 15.3J/cm3 and 56% respectively. Moreover, the better frequency stability in the range from 20Hz to 10kHz, and temperature stability in the range from 25 to 270°C are demonstrated in the (100)-orientated PLZT films. These results indicate that the PLZT films with LNO bottom electrode could be potential candidate for applications in high energy storage density capacitors. •The (100) textured PLZT films are deposited on LNO buffered Si substrate.•Ws of 15.3 J/cm3 and h of 56% are obtained for (100) textured PLZT films.•Frequency and temperature stabilities are presented for (100) textured PLZT films.