Details

Autor(en) / Beteiligte

• Salimon, Igor A.
• Averchenko, Aleksandr V.
• Lipovskikh, Svetlava A.
• Skryleva, Elena A.
• Novikov, Artyom V.
• Lagoudakis, Pavlos G.
• Mailis, Sakellaris

Titel

UV laser-induced nanostructured porous oxide in GaAs crystals

Ist Teil von

• Solid state sciences, 2022-06, Vol.128, p.106887, Article 106887

Ort / Verlag

Elsevier Masson SAS

Erscheinungsjahr

2022

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Laser processing is an important tool for inducing local topographical and chemical changes on the surface of technologically important materials to facilitate various device fabrication procedures or to favor chemical reactions. Here, we report that irradiation of GaAs crystal surfaces with c.w. UV laser radiation (λ = 244 nm) in ambient conditions produces a well defined layer of porous oxide with a thickness up to ∼0.4 μm. Under certain laser irradiation conditions the oxidized layer appears to self-organize into periodic features, collectively known as laser-induced periodic surface structures (LIPSS). The topography and composition of the laser grown surface oxide layer is investigated. [Display omitted] •Spatially selective, deep oxidation of GaAs crystals by UV laser irradiation.•Continuous wave laser-induced periodic surface structures (LIPSS).•UV laser induced non-ablative periodic surface structures (LIPSS).•Laser-induced growth of porous oxide on GaAs crystals.