Details

Autor(en) / Beteiligte

• Tombolato, Sara
• Berner, Ulrich
• Colombara, Diego
• Chrastina, Daniel
• Widenmeyer, Markus
• Binetti, Simona O.
• Dale, Phillip J.

Titel

Cu2ZnSnSe4 device obtained by formate chemistry for metallic precursor layer fabrication

Ist Teil von

• Solar energy, 2015-06, Vol.116, p.287-292

Ort / Verlag

Elsevier Ltd

Erscheinungsjahr

2015

Quelle

Access via ScienceDirect (Elsevier)

Beschreibungen/Notizen

• •CZTSe layers were grown by a new wet process using formate ions and TMG.•Layers were characterized by SEM/EDX, Raman spectroscopy, XRD and C,H,N.•Solar cells built with this absorber layers were functioning.•No crystalline phase other than CZTSe was detectable. Cu2ZnSnSe4 films were prepared by selenization of metallic precursors obtained by a new wet process involving metal formates. Cu(HCOO)2 and Zn(HCOO)2 were used as copper and zinc sources respectively, while tin was introduced as a methoxide. The elemental analysis of the resulting absorber layers revealed a very low carbon content (less than 0.2wt%), which is believed to be a feature that chemical methods need to have in order to stand out as valuable alternatives to high-vacuum processes in this field. Solar cells with efficiencies of up to 2.39% with Voc of 207mV, a Jsc of 31.2mA/cm2 and a fill factor of 37.1% were achieved for these copper-poor CZTSe absorbers.