Details

Autor(en) / Beteiligte

• Shi, Y.
• Wang, S.Y.
• Ma, S.
• Lei, Y.L.
• Liu, H.L.
• Chen, X.L.
• Liu, W.F.

Titel

Nanoscale imaging of ferroelectric domain and resistance switching in hybrid improper ferroelectric Ca3Ti2O7 thin films

Ist Teil von

• Physics letters. A, 2020-09, Vol.384 (25), p.126609, Article 126609

Ort / Verlag

Elsevier B.V

Erscheinungsjahr

2020

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• •Ferroelectric domain switching in Ca3Ti2O7 films is confirmed at room temperature.•The piezoelectric coefficient of Ca3Ti2O7 film is evaluated to be ∼5 pm/V.•The Ca3Ti2O7 film exhibits ferroelectric resistance switching behavior. Hybrid improper ferroelectrics have their electric polarization generated by two or more combined non-ferroelectric structural distortions such as the rotation and tilting of Ti-O octahedral in Ca3Ti2O7 (CTO) family. In this work, we prepared different thickness CTO thin films on Pt substrates by pulsed laser deposition, and investigated their ferroelectric polarization reversal and the current transport properties by using the piezoresponse force microscopy and conducting atomic force microscopy, respectively. It is found that the CTO films exhibit clear ferroelectric domain switching and ferroelectric resistance switching behaviors, and the maximum resistive ratios of CTO film reaches ∼1750. These results demonstrate that hybrid improper ferroelectrics CTO films are promising materials for being employed in non-volatile memory and logic devices.