Details

Autor(en) / Beteiligte

• Xu, C.X.
• Liu, H.
• Pan, X.H.
• Ye, Z.Z.

Titel

Growth and characterization of Si-doped β-Ga2O3 films by pulsed laser deposition

Ist Teil von

• Optical materials, 2020-10, Vol.108, p.110145, Article 110145

Ort / Verlag

Elsevier B.V

Erscheinungsjahr

2020

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• (2‾01) oriented Si-doped β-Ga2O3 films were grown on (0001) sapphire substrates with different SiO2 content in the targets by pulsed laser deposition (PLD). A carrier density of 8.3 × 1018 cm−3 and a Hall mobility of 0.07 cm2 V−1s−1 have been observed for film grown with 1.5 wt % SiO2 content in the target. Optical transmission spectra show that all the films have high visible region transmittance. Our work shows that PLD is an effective technique for growing conductive Si-doped β-Ga2O3 films. •Si-doped β-Ga2O3 films were grown on sapphire substrates.•The optical and electrical performances of Si-doped β-Ga2O3 films are investigated.•Si-doped β-Ga2O3 film shows a carrier density of 1018 cm−3 and a Hall mobility of 0.07 cm2 V−1s−1.•Pulsed laser deposition is an effective technique for growing Si-doped β-Ga2O3 films.