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Endotaxial growth of InSb nanocrystals at the bonding interface of the In+ and Sb+ ion implanted SOI structure
Ist Teil von
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2009-05, Vol.267 (8-9), p.1360-1363
Ort / Verlag
Elsevier B.V
Erscheinungsjahr
2009
Link zum Volltext
Quelle
Access via ScienceDirect (Elsevier)
Beschreibungen/Notizen
Growth of InSb nanocrystals at the Si/SiO2 bonding interface of silicon-on-insulator (SOI) structures has been studied as a function of the annealing temperature. SOI structures with the ion implanted regions above and below the bonding interface were produced as a result of the hydrogen transfer of the Sb+ ion implanted silicon layer from first silicon substrate to the In+ ion implanted SiO2 layer thermally-grown on the second silicon substrate. Rutherford backscattering spectrometry and high-resolution transmission electron microscopy (XTEM) were used to study the properties of the prepared structures. Up-hill diffusion of In and Sb atoms from the implantation regions toward the bonding interface as well as subsequent interface-mediated growth of InSb nanocrystals were observed as the annealing temperature achieved 1100°C. The strain minimizing orientations of the Si and InSb lattice heteropairs were obtained from XTEM analysis of the grown nanocrystals.