Details

Autor(en) / Beteiligte

• Franks, M.
• Casse, G.
• Mandić, I.
• Powell, S.
• Vilella, E.
• Vossebeld, J.
• Wonsak, S.

Titel

E-TCT characterization of a thinned, backside biased, irradiated HV-CMOS pixel test structure

Ist Teil von

• Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2021-03, Vol.991, p.164949, Article 164949

Ort / Verlag

Elsevier B.V

Erscheinungsjahr

2021

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• This paper presents the results of edge-Transient Current Technique (e-TCT) measurements of a test structure of a High Voltage CMOS (HV-CMOS) pixel demonstrator, the H35DEMO. Several high resistivity (1000 Ω⋅cm) samples of the device were thinned to 100μm, processed for backside biasing, and irradiated with neutrons to fluences up to 2⋅1016neq⋅cm−2. The evolution of effective doping concentration with respect to fluence is studied. Samples irradiated to a fluence of 5⋅1014neq⋅cm−2 are fully depleted beyond −50V substrate bias voltage while samples irradiated to the highest fluence reach 30 μm depletion at −200V.