Details

Autor(en) / Beteiligte

• Mironova, M.
• Metodiev, K.
• Allport, P.
• Berdalovic, I.
• Bortoletto, D.
• Buttar, C.
• Cardella, R.
• Dao, V.
• Dyndal, M.
• Freeman, P.
• Flores Sanz de Acedo, L.
• Gonella, L.
• Kugathasan, T.
• Pernegger, H.
• Piro, F.
• Plackett, R.
• Riedler, P.
• Sharma, A.
• Schioppa, E.J.
• Shipsey, I.
• Solans Sanchez, C.
• Snoeys, W.
• Wennlöf, H.
• Weatherill, D.
• Wood, D.
• Worm, S.

Titel

Measurement of the relative response of small-electrode CMOS sensors at Diamond Light Source

Ist Teil von

• Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2020-03, Vol.956, p.163381, Article 163381

Ort / Verlag

Elsevier B.V

Erscheinungsjahr

2020

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• This paper outlines the results of investigations into the effects of radiation damage in the mini-MALTA depleted monolithic pixel sensor prototype. Measurements were carried out at Diamond Light Source using a micro-focus X-ray beam, which scanned across the surface of the device in 2 μm steps. This allowed the in-pixel photon response to be measured directly with high statistics. Three pixel design variations were considered: one with the standard continuous n− layer layout and front-end, and extra deep p-well and n− gap designs with a modified front-end. Five chips were measured: one unirradiated, one neutron irradiated, and three proton irradiated. The standard design showed a decrease of 12% in pixel response after irradiation to 1e15 neq∕cm2. For the two new designs the pixel response did not decrease significantly after irradiation. A decrease of pixel response at high biasing voltages was observed. The charge sharing in the chip was quantified and found to be in agreement with expectations.