Details

Autor(en) / Beteiligte

• Vilas Bôas, Alexis C.
• de Melo, M.A.A.
• Santos, R.B.B.
• Giacomini, R.
• Medina, N.H.
• Seixas, L.E.
• Finco, S.
• Palomo, F.R.
• Romero-Maestre, A.
• Guazzelli, Marcilei A.

Titel

Ionizing radiation hardness tests of GaN HEMTs for harsh environments

Ist Teil von

• Microelectronics and reliability, 2021-01, Vol.116, p.114000, Article 114000

Ort / Verlag

Elsevier Ltd

Erscheinungsjahr

2021

Quelle

Elsevier ScienceDirect Journals

Beschreibungen/Notizen

• The COTS power transistors based in GaN were exposed to TID effects by 10-keV X-rays. These HEMTs were tested in the On- and Off-state bias conditions. Switching tests were performed before and after irradiation steps. The devices were characterized at temperatures ranging from −50 °C to +75 °C. The results indicate that the GaN-technology is a great candidate to be used in harsh environments, because the tested devices have presented an expressive recovery of its parameters of Vth, gmmax and switching times, after accumulation of 350 krad of TID.