Microelectronic engineering, 2011-07, Vol.88 (7), p.1495-1498
2011
Volltextzugriff (PDF)
Details
- Autor(en) / Beteiligte
- Titel
- Study of interfaces and band offsets in TiN/amorphous LaLuO3 gate stacks
- Ist Teil von
- Microelectronic engineering, 2011-07, Vol.88 (7), p.1495-1498
- Ort / Verlag
- Amsterdam: Elsevier
- Erscheinungsjahr
- 2011
- Quelle
- Alma/SFX Local Collection
- Sprache
- Englisch
- Identifikatoren
- ISSN: 0167-9317eISSN: 1873-5568DOI: 10.1016/j.mee.2011.03.051Titel-ID: cdi_crossref_primary_10_1016_j_mee_2011_03_051
- Format
- –
- Schlagworte
- Condensed matter: electronic structure, electrical, magnetic, and optical properties, Condensed matter: structure, mechanical and thermal properties, Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder, Cross-disciplinary physics: materials science, rheology, Electron and ion emission by liquids and solids, impact phenomena, Electron energy loss spectra, Equations of state, phase equilibria, and phase transitions, Exact sciences and technology, Impact phenomena (including electron spectra and sputtering), Materials science, Phase diagrams and microstructures developed by solidification and solid-solid phase transformations, Physics, Specific phase transitions, Structural transitions in nanoscale materials