Details

Autor(en) / Beteiligte

• Liu, Yi
• Zhang, Xin
• Wang, Yukai
• Yu, Jingyi
• Jiang, Weiwei
• Wang, Hualin
• Ding, Wanyu

Titel

The influence of N-based group doping on surface potential of TiO2 electron transport layer prepared by Sol-gel and sputtering techniques

Ist Teil von

• Materials letters, 2022-10, Vol.325, p.132842, Article 132842

Ort / Verlag

Elsevier B.V

Erscheinungsjahr

2022

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• •ETLTiO2 were prepared by Sol-gel and DC-PMS techniques, respectively.•(001) lattice in ETLSol-gelTiO2 was random.•(001) lattice in ETLDC-PMSTiO2 was parallel to the surface.•(001) lattice plane restrain the diffusion of N+ or NHx+ in ETLTiO2.•N+ or NHx+ diffusion has little influence on band structure of ETLDC-PMSTiO2. TiO2 ETL were prepared by DC-PMS and Sol-gel techniques respectively, which could be used in perovskite solar cells. N+ and NHx+ ions/group beam was used to bombard the surface of Sol-gel and DC-PMS TiO2 ETLs. After the bombardment, the surface potential and sheet carrier concentration of Sol-gel TiO2 ETL obviously deteriorated from 4.66 to 4.43 eV and 2.17 to 0.41 (1011/cm2), respectively. On the contrary, little deterioration happened onto the surface potential and sheet carrier concentration of DC-PMS TiO2 ETL, which decreased from 4.81 to 4.79 eV and 2.02 to 1.63 (1011/cm2), respectively. Besides, the deterioration of surface potential and sheet carrier concentration for Sol-gel and DC-PMS TiO2 ETLs was discussed.