Details

Autor(en) / Beteiligte

• Zamchiy, A.O.
• Baranov, E.A.
• Konstantinov, V.O.
• Lunev, N.A.
• Sakhapov, S.Z.
• Korolkov, I.V.
• Volodin, V.A.

Titel

Activation energy of gold-induced crystallization of amorphous silicon suboxide films

Ist Teil von

• Materials letters, 2022-09, Vol.323, p.132566, Article 132566

Ort / Verlag

Elsevier B.V

Erscheinungsjahr

2022

Quelle

ScienceDirect

Beschreibungen/Notizen

• •Au-induced crystallization of a-SiO0.2 films was carried out at 210–275 °C.•The activation energy for AuIC of a-SiO0.2 was determined for the first time to be 1.7 ± 0.1 eV.•Raman spectroscopy revealed the improvement of crystalline properties of poly-Si films with decreasing annealing temperature.•XRD revealed the formation of poly-Si with (111) crystallographic orientation. Polycrystalline silicon (poly-Si) films were fabricated by gold-induced crystallization (AuIC) of amorphous silicon suboxide (a-SiOx, x  = 0.2) films at temperatures of 210–275 °C. The films were studied by in situ optical microscopy, Raman spectroscopy, and X-ray diffractometry. The activation energy for AuIC of a-SiO0.2 was determined for the first time to be 1.7 ± 0.1 eV.