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Enhanced photovoltaic properties in polycrystalline BiFeO3 thin films with rhombohedral perovskite structure deposited on fluorine doped tin oxide substrates
Ist Teil von
Materials letters, 2012-12, Vol.88, p.140-142
Ort / Verlag
Elsevier B.V
Erscheinungsjahr
2012
Link zum Volltext
Quelle
Elsevier ScienceDirect Journals Complete
Beschreibungen/Notizen
Polycrystalline BiFeO3 thin films have been deposited on fluorine doped tin oxide substrates successfully through a modified chemical solution deposition process based on using N,N-dimethylformamide as solvent. Structural analyses show that, N,N-dimethylformamide is beneficial to reduce the structural strain, and hence rhombohedral BiFeO3 films rather than the conventional pseudocubic ones were obtained. Absorption spectrum indicates that the modified process derived rohombohedral BiFeO3 has a narrower band gap (2.54eV) than that of the conventional process derived pseudocubic BiFeO3 (2.76eV). The BiFeO3 shows good photovoltaic properties with indium tin oxide as top electrode. The short circuit current density and open circuit voltage of the heterojunctions are measured to be 0.13mA/cm2 and 0.65V, respectively, much higher than the reported values for the conventional process derived pseudocubic BiFeO3 based heterojunctions. Our results indicate that the modified process derived rhombohedral BiFeO3 can induce higher photovoltaic effect compared with the conventional process derived pseudocubic counterpart.
► Polycrystalline BFO films on FTO substrates were prepared by CSD process. ► Using DMF as solvent is beneficial to reduce the tensile stress. ► The rhombohedral films rather than the pseudocubic ones were obtained. ► The narrower band gap rhombohedral films showed good photovoltaic properties.