Details

Autor(en) / Beteiligte

• Zhao, Xinhong
• Dong, Jixiang
• Fang, Yongchu
• Dai, Jinyu
• Chen, Jiahuan
• Song, Xiaoxian
• Fu, Zhendong
• Sun, Wenbao
• Wang, Quan
• Yan, Zaoxue

Titel

Cu2O@Au-CsPbI3 heterostructures for plasmon hot carrier transfer enhanced optoelectronics

Ist Teil von

• Journal of alloys and compounds, 2024-04, Vol.981, p.173644, Article 173644

Ort / Verlag

Elsevier B.V

Erscheinungsjahr

2024

Quelle

Elsevier ScienceDirect Journals

Beschreibungen/Notizen

• Plasmon hot carrier devices have tremendous potential applications in broadband photovoltaics, photodetection, photocatalysis, and intelligent optoelectronics, as they have the ability to generate hot carriers with energy lower than the optical bandgap at Schottky junctions and broaden the spectral range. However, this is mostly challenged by the lack of effective methods for the separation, migration, and extraction of plasmon hot carrier. In this work, a Cu2O@Au-CsPbI3 heterostructure was fabricated using facile low-temperature solution synthesis and spin-coating technique. The proposed heterostructure benefits from the simultaneous transfer of plasmon hot holes to Cu2O and hot electrons to CsPbI3, as well as enhanced charge separation driven by the built-in electric field at the p-n heterojunction interface. The heterostructure realizes remarkably enhanced light absorption, reduces carrier recombination, and further improves conversion efficiency. It exhibits a wide spectrum response of ultraviolet-visible-near infrared and achieves enhanced photodetection performance. The results suggest that Cu2O@Au-CsPbI3 heterostructure is a promising candidate for optoelectronic devices based on the harvesting of plasmonic hot carriers. •Cu2O@Au-CsPbI3 heterostructures were fabricated by a low-cost solution method.•The heterostructures can simultaneously transfer plasmon hot holes and hot electrons.•The p-n heterojunction accelerates the separation and extraction of hot carriers.•The Cu2O@Au-CsPbI3 heterostructures exhibited an enhanced optoelectronic performance.