Details

Autor(en) / Beteiligte

• Zhu, Zishu
• Ou, Zhanpeng
• Chen, Yanpu
• Zhao, JiaXin
• Zhu, Wei
• Ma, Pingping
• Lou, Liren
• Pan, Bicai

Titel

Dopant concentration dependent room temperature ferromagnetism in crystalline Sc doped AlN thin films

Ist Teil von

• Journal of alloys and compounds, 2023-10, Vol.961, p.170986, Article 170986

Ort / Verlag

Elsevier B.V

Erscheinungsjahr

2023

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• In this study, high uniformity AlN thin films with varying Sc doping concentration levels were deposited on Ti (120 nm)/Si substrates. The impact of Sc doping ratio and annealing temperature on the magnetic properties of Al1−xScxN were studied. This work suggests that the origin of ferromagnetism of Al1−xScxN is the Al vacancies introduced by Sc ions. The amount of Al vacancies grew as the Sc doping ratio increased. According to the results of spin-polarized density of states (DOS), it is hypothesized that when the concentration of Al vacancies in Al1−xScxN grows, polarized itinerant electrons exist and result a magnetic phase change. •High uniformity AlN thin films composed of nano columns with different Sc doping concentrations were deposited on Ti (120 nm) /Si substrates in this work. The room-temperature ferromagnetism of the deposited Al1-xScxN films can be observed.•Combining the magnetization hysteresis loops and X-ray photoelectron spectroscopy (XPS) of the doped AlN samples with different Sc doping concentration, this work suggests that the ferromagnetism is originated from Al vacancies which are induced by Sc ions.•According to the spin-polarized density of states (DOS), the Al1-xScxN with a high concentration of Al vacancies exhibit semi-metallic characteristics. These results suggest that the interaction between the magnetic moments belonging to neighboring ions changes from bound magnetic polaron to RKKY interaction when the concentration of Al vacancies in Al1-xScxN increases.