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Details

Autor(en) / Beteiligte
Titel
Enhanced photovoltaic performance of ZnO nanorod-based dye-sensitized solar cells by using Ga doped ZnO seed layer
Ist Teil von
  • Journal of alloys and compounds, 2015-06, Vol.633, p.408-414
Ort / Verlag
Elsevier B.V
Erscheinungsjahr
2015
Quelle
Alma/SFX Local Collection
Beschreibungen/Notizen
  • •ZnO nanorods were grown on Ga-doped ZnO seed layers using hydrothermal method.•Using the ZnO nanorods as photoanodes for fabricated dye-sensitized solar cells.•The highest η of 1.23% can be achieved in a DSSC with 3at.% Ga-doped in seeds.•The effects of ZnO seed layers on electron transport properties were investigated.•The enhancement performance of DSSCs contributed to higher dye loading and ηcc. Zinc oxide (ZnO) nanorod arrays were grown on FTO substrates with a Ga-doped ZnO (GZO) seed layer by a hydrothermal method. GZO seed layers were obtained via sol–gel technology with Ga concentration in the range of 0–4at.%. The dye sensitized solar cells (DSSCs) using ZnO nanorod arrays as the photoanode layers were prepared. The effect of Ga dopant concentrations in ZnO seed layer on the morphology features of ZnO nanorod arrays and the performance of DSSCs were systematically investigated. Results indicate that the average diameter and density of ZnO nanorod arrays decrease with increasing Ga concentration, but their length shows an opposite trend. The photocurrent density–voltage (J–V) characteristics reveal that the DSSCs with GZO seed layer exhibit significantly improved photovoltaic performance. In particular, the highest energy conversion efficiency (η) of 1.23% can be achieved in a DSSC with 3at.% Ga doping, which is increased by 86.36% compared with that of the undoped DSSC. The external quantum efficiency (EQE) spectra and electrochemical impedance spectroscopy (EIS) were employed to explore the photon-to-electron conversion process in DSSCs. It is demonstrated that the performance enhancement of DSSCs based on GZO seed layer can be attributed to higher amount of dye loading, more efficient electron transportation and better electrons collection efficiency.
Sprache
Englisch
Identifikatoren
ISSN: 0925-8388
eISSN: 1873-4669
DOI: 10.1016/j.jallcom.2015.02.039
Titel-ID: cdi_crossref_primary_10_1016_j_jallcom_2015_02_039

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