Details

Autor(en) / Beteiligte

• Vasiliev, V.V.
• Vishnyakov, A.V.
• Dvoretsky, S.A.
• Predein, A.V.
• Sabinina, I.V.
• Sidorov, Yu.G.
• Stuchinsky, V.A.

Titel

Impact of high-conductivity n-type anti-debiasing layer on the photoresponse of “leaking” and “non-leaking” FPA elements in photovoltaic MCT-based n-on-p infrared FPA detectors

Ist Teil von

• Infrared physics & technology, 2017-03, Vol.81, p.223-227

Ort / Verlag

Elsevier B.V

Erscheinungsjahr

2017

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Impact of high-conductivity n-type anti-debiasing layer (ADL) on the photoresponse of focal plane array (FPA) elements in mercury-cadmium-tellurium based photovoltaic n-on-p infrared FPA detectors is analyzed via consideration of, first, measured current-voltage characteristics of FPA elements with “leaking” and “non-leaking” array photodiodes and, second, spatial photoresponse profiles measured using FPA elements of both types. A most pronounced manifestation of the parasitic diode with the p-n junction at the absorber layer/ADL interface consists in the emergence of negative photoresponses produced by the “leaking” FPA elements.