Details

Autor(en) / Beteiligte

• Liu, Dongdong
• Zhang, Zhenyu
• Feng, Jiajian
• Yu, Zhibin
• Meng, Fanning
• Shi, Chunjing
• Xu, Guanghong
• Shi, Shuyan
• Liu, Wei

Titel

Environment-friendly chemical mechanical polishing for copper with atomic surface confirmed by transmission electron microscopy

Ist Teil von

• Colloids and surfaces. A, Physicochemical and engineering aspects, 2023-01, Vol.656, p.130500, Article 130500

Ort / Verlag

Elsevier B.V

Erscheinungsjahr

2023

Quelle

ScienceDirect

Beschreibungen/Notizen

• Atomic and close-to-atomic scale manufacturing is a new technology that can achieve atomic-level manufacturing precision and functional critical dimension. Here we propose an efficient approach for atomic-scale chemical mechanical polishing (CMP) surface of fine copper utilizing optimized CMP slurry and polishing parameters. The optimal polishing slurry is composed of silica, hydrogen peroxide, aspartic acid, sodium phosphate and deionized water, where abrasive particles of silica nanospheres synthesized are uniformly dispersed. Prior to CMP, copper was precisely lapped by ceria slurry. After CMP, the surface roughness is 0.099 nm with an area of 50 × 50 µm2. Atomic-level flatness surface is acquired. To the best of our knowledge, it is the lowest surface roughness with such a relatively large scanning area, compared with those published previously. High resolution transmission electron microscopy (HRTEM) images of polishing surface further prove that atomic-scale surface roughness is achieved. X-ray photoelectron spectra clarify CMP mechanism that complex oxidation, ionization and chelation are sparked on copper surface and the soft layer is formed. The presented efficient approach for atomic-scale polishing will widen the application fields of copper materials and copper-based components. [Display omitted]