Details

Autor(en) / Beteiligte

• Zrinski, Ivana
• Mardare, Cezarina Cela
• Jinga, Luiza-Izabela
• Kollender, Jan Philipp
• Socol, Gabriel
• Hassel, Achim Walter
• Mardare, Andrei Ionut

Titel

Phosphate incorporation in anodic hafnium oxide memristors

Ist Teil von

• Applied surface science, 2021-05, Vol.548, p.149093, Article 149093

Ort / Verlag

Elsevier B.V

Erscheinungsjahr

2021

Link zum Volltext

Quelle

Elsevier ScienceDirect Journals Complete

Beschreibungen/Notizen

• [Display omitted] •Anodic memristors on Hf are grown in different concentrations of phosphate buffers.•Incorporation of electrolyte species in HfO2 anodic memristors is evidenced by XPS.•Conductive filaments pinning due to incorporated Hf-O-P compounds is suggested.•Properties of anodic HfO2 memristors are similar with those from other techniques.•Mild heat treatments of anodic HfO2 memristors improve their electrical behaviour. The electrochemical fabrication of memristive devices based on Hf is demonstrated. Electrolyte incorporation in memristors is confirmed in oxides grown in 0.1, 0.5 and 1 M phosphate buffers. The impact of phosphate species on conductive filaments formation is described. The use of 1 M phosphate buffer allows formation of Hf-O-P compounds that hinder phosphate incorporation into the bulk of the memristors. Endurance, retention and memory characteristics of anodic Hf memristors suggest improved properties, as compared with previous reports, especially after mild heat treatments of devices. High resolution atomic imaging of conducting filaments allowed further understanding of memristive switching in HfO2.