Details

Autor(en) / Beteiligte

• Laracuente, Arnaldo
• Bronikowski, Michael J
• Gallagher, Alan

Titel

Chemical vapor deposition of nanometer-size aluminum features on silicon surfaces using an STM tip

Ist Teil von

• Applied surface science, 1996-11, Vol.107 (1-4), p.11-17

Ort / Verlag

Amsterdam: Elsevier B.V

Erscheinungsjahr

1996

Link zum Volltext

Quelle

Elsevier Journal Backfiles on ScienceDirect (DFG Nationallizenzen)

Beschreibungen/Notizen

• We have deposited aluminum (Al) features on silicon (Si) surfaces using the lectron beam and electric field produced at the tip of a scanning tunneling microscope (STM), in both tunneling and field emission modes. Lines as small as 3 nm in width have been produced on crystal Si(001). Al deposition is accomplished by exposing the tip-sample junction to trimethylaluminum (TMA) gas while tunneling. The electron beam of the STM tip dissociates the TMA molecules adsorbed on the surface, resulting in the production of surface-bound Al and hydrocarbon gas. Independent Auger electron spectroscopy studies of the electron induced deposition of Al from TMA shows nearly pure Al deposits.