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Photochemical studies of (aminoethylaminomethyl) phenethyltrimethoxysilane self-assembled monolayer films
Ist Teil von
Thin solid films, 1996-09, Vol.284, p.568-572
Ort / Verlag
Elsevier B.V
Erscheinungsjahr
1996
Quelle
Elsevier Journal Backfiles on ScienceDirect (DFG Nationallizenzen)
Beschreibungen/Notizen
The deep UV (193 nm) photochemistry of the self-assembled monolayer film PEDA, H
2NCH
2CH
2NHCH
2C
6H
4CH
2CH
2Si(OCH
3)
3, has been studied on Si and SiO
2 surfaces using UV and X-ray photoelectron spectroscopies, contact angle goniometry, and laser-desorption Fourier transform mass spectrometry. Mechanistic studies show that Si-C cleavage is the ultimate photochemical pathway; however, interpretation of the photochemical data is complicated by formation of a surface-bound intermediate, as well as adsorption of photoproducts to the substrate surface. Treatment of the exposed film with high ionic strength aqueous solutions is found to remove the adsorbed material. Patterned 193 nm exposure of PEDA SAM films on SiO
2 produces a surface template of reactive amine groups at relatively low doses (~ 400 mJ cm
−2), which can be used for selective, high-resolution attachment or deposition of materials on the unexposed regions of the film.