Details

Autor(en) / Beteiligte

• Dressick, Walter J.
• Dulcey, Charles S.
• Chen, Mu-San
• Calvert, Jeffrey M.

Titel

Photochemical studies of (aminoethylaminomethyl) phenethyltrimethoxysilane self-assembled monolayer films

Ist Teil von

• Thin solid films, 1996-09, Vol.284, p.568-572

Ort / Verlag

Elsevier B.V

Erscheinungsjahr

1996

Quelle

Elsevier Journal Backfiles on ScienceDirect (DFG Nationallizenzen)

Beschreibungen/Notizen

• The deep UV (193 nm) photochemistry of the self-assembled monolayer film PEDA, H 2NCH 2CH 2NHCH 2C 6H 4CH 2CH 2Si(OCH 3) 3, has been studied on Si and SiO 2 surfaces using UV and X-ray photoelectron spectroscopies, contact angle goniometry, and laser-desorption Fourier transform mass spectrometry. Mechanistic studies show that Si-C cleavage is the ultimate photochemical pathway; however, interpretation of the photochemical data is complicated by formation of a surface-bound intermediate, as well as adsorption of photoproducts to the substrate surface. Treatment of the exposed film with high ionic strength aqueous solutions is found to remove the adsorbed material. Patterned 193 nm exposure of PEDA SAM films on SiO 2 produces a surface template of reactive amine groups at relatively low doses (~ 400 mJ cm −2), which can be used for selective, high-resolution attachment or deposition of materials on the unexposed regions of the film.