Details

Autor(en) / Beteiligte

• Mulato, M.
• Toet, D.
• Aichmayr, G.
• Spangenberg, A.
• Santos, P.V.
• Chambouleyron, I.

Titel

Short-pulse laser crystallization and structuring of a-Ge

Ist Teil von

• Journal of non-crystalline solids, 1998-01, Vol.227, p.930-933

Ort / Verlag

Elsevier B.V

Erscheinungsjahr

1998

Quelle

Elsevier ScienceDirect Journals

Beschreibungen/Notizen

• Laser pulses in the nanosecond range were used to crystallize and structure (lateral dimensions≤1 μm) amorphous germanium thin films. The crystallized material consists of grains with sizes increasing from about 5 to more than 20 nm as a function of laser pulse energy. Arrays of polycrystalline Ge dots (diameter ∼1 μm, period ∼5 μm) were produced by bringing three laser beams to interference on the sample surface. These arrays can be used as seeds for solid-phase growth of polycrystalline areas by thermal annealing below 450°C.