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Short-pulse laser crystallization and structuring of a-Ge
Ist Teil von
Journal of non-crystalline solids, 1998-01, Vol.227, p.930-933
Ort / Verlag
Elsevier B.V
Erscheinungsjahr
1998
Quelle
Elsevier ScienceDirect Journals
Beschreibungen/Notizen
Laser pulses in the nanosecond range were used to crystallize and structure (lateral dimensions≤1
μm) amorphous germanium thin films. The crystallized material consists of grains with sizes increasing from about 5 to more than 20 nm as a function of laser pulse energy. Arrays of polycrystalline Ge dots (diameter ∼1
μm, period ∼5
μm) were produced by bringing three laser beams to interference on the sample surface. These arrays can be used as seeds for solid-phase growth of polycrystalline areas by thermal annealing below 450°C.