Details

Autor(en) / Beteiligte

• Krasnov, Alex N.
• Bajcar, Robert C.
• Hofstra, Peter G.

Titel

Threshold voltage trends in ZnS : Mn-based alternating-current thin-film electroluminescent devices: role of native defects

Ist Teil von

• Journal of crystal growth, 1998-11, Vol.194 (1), p.53-60

Ort / Verlag

Elsevier B.V

Erscheinungsjahr

1998

Quelle

Elsevier Journal Backfiles on ScienceDirect (DFG Nationallizenzen)

Beschreibungen/Notizen

• We report on the effect of manganese concentration c Mn, substrate temperature T sub, and post-deposition annealing on threshold voltage V th of ZnS : Mn-based alternating-current thin-film electroluminescent (ACTFEL) devices. The increase in the V th and a shift of the edge absorption to higher energies are observed with increasing c Mn, T sub, and after annealing of the device. For the first time, the observed trends are consistently explained via the formation of native lattice defects.