Details

Autor(en) / Beteiligte

• Kawatsura, K.
• Nakae, T.
• Takahashi, R.
• Nakai, Y.
• Arai, S.
• Aoki, Y.
• Goppelt-Langer, P.
• Yamamoto, S.
• Takeshita, H.
• Naramoto, H.
• Horino, Y.
• Mokuno, Y.
• Fujii, K.
• Mitamura, T.
• Terasawa, M.
• Uchida, H.
• Koterazawa, K.

Titel

Analysis of radiation-induced segregation in type 304 stainless steel by PIXE and RBS channeling

Ist Teil von

• Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1996-09, Vol.118 (1), p.363-366

Ort / Verlag

Elsevier B.V

Erscheinungsjahr

1996

Link zum Volltext

Quelle

Elsevier Journal Backfiles on ScienceDirect (DFG Nationallizenzen)

Beschreibungen/Notizen

• The creation of defects and radiation-induced segregation (RIS) in single crystals of type 304 stainless steel, 1.6 MeV He irradiated up to 2.5 × 10 17 cm −2 at RT, has been investigated by using a combination of RBS and PIXE with channeling (RBS-C and PIXE-C). From the RBS-C, it is found that radiation-induced defects for 〈110〉 orientation increased more slowly with irradiation dose from those for the 〈100〉 and 〈111〉 orientations. The PIXE-C measurements show that Si atoms segregate to the (100), (110) and (111) surfaces and S atoms seem to enrich slightly in the (100) and (110) surfaces during 1.6 MeV He ion irradiation. It is the first time that the phenomenon of radiation-induced segregation is observed in stainless steels at room temperature irradiation.