Details

Autor(en) / Beteiligte

• Bibić, N.
• Milosavljević, M.
• Peruško, D.
• Serruys, Y.
• Jeynes, C.

Titel

Ion beam induced mixing in Pd thin films on silicon

Ist Teil von

• Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1992-04, Vol.67 (1), p.500-503

Ort / Verlag

Elsevier B.V

Erscheinungsjahr

1992

Link zum Volltext

Quelle

Elsevier Journal Backfiles on ScienceDirect (DFG Nationallizenzen)

Beschreibungen/Notizen

• Ion beam mixing of thin palladium layers (50–130 nm) on n-Si(111) substrates, induced by 250–450 keV arsenic ions has been studied. Implantation has been performed at room temperature (RT) to the doses from 0.5–1 × 10 16 ions cm −2. Structural characterization included Rutherford backscattering spectrometry and X-ray diffraction analysis. Our results show that the thickness of the polycrystalline Pd 2Si phase induced by ion bombardment is proportional to the square root of the dose. The high value of F D, the linear energy deposition density at the Pd/Si interface, indicates that the formation of Pd 2Si phase is a diffusion limited process.