Details

Autor(en) / Beteiligte

• Manchanda, L.
• Weber, G.R.
• Kim, Y.O.
• Feldman, L.C.
• Moryia, N.
• Weir, B.E.
• Kistler, R.C.
• Green, M.L.
• Brasen, D.

Titel

A new method to fabricate thin oxynitride/oxide gate dielectric for deep submicron devices

Ist Teil von

• Microelectronic engineering, 1993-08, Vol.22 (1), p.69-72

Ort / Verlag

Elsevier B.V

Erscheinungsjahr

1993

Quelle

Access via ScienceDirect (Elsevier)

Beschreibungen/Notizen

• In this paper, we report a new method to fabricate oxynitride/oxide gate dielectrics for MOS devices. This method utilizes a thin layer of oxynitride as a membrane for controlled diffusion of O 2 and oxidation of Si at high temperatures with low thermal budget. MOS devices made with these oxynitride/oxide structures have interface properties like thermal SiO 2 with a structure resistant to boron diffusion.