Details

Autor(en) / Beteiligte

• Pérez-Rodríguez, A.
• Roca, E.
• Jawhari, T.
• Morante, J.R.
• Schreutelkamp, R.J.

Titel

Non-destructive characterization of the uniformity of thin cobalt disilicide films by Raman microprobe measurements

Ist Teil von

• Thin solid films, 1994-10, Vol.251 (1), p.45-50

Ort / Verlag

Lausanne: Elsevier B.V

Erscheinungsjahr

1994

Quelle

Access via ScienceDirect (Elsevier)

Beschreibungen/Notizen

• The ability of microRaman spectroscopy for the non-destructive characterization of the uniformity of thin silicide films on Si is analyzed. The technique is applied to characterize thin polycrystalline and epitaxial CoSi 2 films. The absorption coefficient of these films, α, at the excitation wavelength of 514.5 nm is determined from Raman scattering measurements in combination with Rurherford backscattering spectrometry. Using this value, the thickness uniformity of the layers can be investogated by microRaman spectroscopy with a lateral resolution below the size of the devices to be defined on the structures. Moreover, even if α is not known, the product α d can be calculated in a straightforward way from Raman measurements, where d is the film thickness. By monitoring this product, the homogeneity of the layers can be analyzed. The results obtained are discussed in terms of the different processing of the layers. Finally, the ability of the technique for the characterization of the films is studied as a function of their thickness.